NDL (Novel Device Laboratory, Beijing) has been developing a unique SiPM technology (EQR SiPM) that employs the resistor under each APD cell in the epitaxial layer as the quenching resistors. EQR SiPM has the advantages of small microcell, high microcell density (large dynamic range) while retaining high fill factor and high photon detection efficiency (PDE), low temperature coefficient for breakdown voltage, simple fabrication technology and radiation hardness. It is also easy to implement charge division in chip to realize a high resolving position-sensitive (PSS) SiPM.
NDL transferred its proprietary technologies of EQR SiPM, PSS SiPM and related modules to Capital Photonics Co., Ltd., and now provides customized SiPM / APD / PIN prototypes via the latter for users and partners.
Silicon Photomultiplier (SiPM); "Geiger" mode (GM); Avalanche Photodiode (APD); PIN-type Photodiode (PIN)
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